研究室名前
研究室名前
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Publications

Original Papers


  • Ryota Negishi (#: Corresponding author), Chaopeng Wei, Yao Yao, Yui Ogawa, Masashi Akabori, Yasushi Kanai, Kazuhiko Masumoto, Yoshitaka Taniyasu and Yoshihiro Kobayashi
    "Turbostratic stacking effect in multilayer graphene on the electrical transort properties"
    Physica Status Solidi B     (2019) in press
    Doi: 10.1002/pssb.201900437

  • Chaopeng Wei, Ryota Negishi(#), Yui Ogawa, Masashi Akabori, Yoshitaka Taniyasu and Yoshihiro Kobayashi
    "Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance"
    Japanese Journal of Applied Physics     Vol. 58 (2019) SIIB04-1-5
    Doi:10.7567/1347-4065-ab0c7b

  • Ritsu Niimi, Ryota Negishi(#), Michiharu Arifuku, Noriko Kiyoyanagi, Tomohiro Yamaguchi, Koji Ishibashi and Yoshihiro Kobayashi
    "Effect of protective layer on carbon nanotube thin film channel in biosensor device"
    Japanese Journal of Applied Physics     Vol. 58 (2019) SIIB14-1-5
    Doi:10.7567/1347-4065/ab1256

    Bruno Kenichi Saika, Ryota Negishi(#) and Yoshihiro Kobayashi
    "Neuromorphic Switching Behavior in the Multi-stacking Composed of Pt/Graphene Oxide/Ag2S/Ag"
    Japanese Journal of Applied Physics     Vol. 58 (2019) SIID08-1-5
    Doi: 10.7567/1347-4065/ab1257

  • H. Kase, R. Negishi(#), M. Arifuku, N. Kiyoyanagi and Y. Kobayashi
    "Biosensor response from target molecules with inhomogeneous charge localization"
    Journal of Applied Physics     Vol.124 (2018) 064502/1-6. (selected as Eidtor's picks)
    Doi: 10.1063/1.5036538

  • R. Negishi(#), K. Takashima and Y. Kobayashi
    "Investigation of surface potentials in reduced graphene oxide flake by Kelvin force microscopy"
    Japanese Journal of Applied Physics     Vol. 57, (2018) 06HD02/1-4.
    Doi:10.7567/JJAP.57.06HD02

  • R. Negishi(#), K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa and Y. Kobayashi
    "Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking"
    Applied Physics Letters     (2017) Vol 110, (2017) 201901/1-4.
    Doi: 10.1063/1.4983349

  • M. Fukumori, P. R. Raj, T. Fujiwara, A. Termeh Yousefi, R. Negishi, Y. Kobayashi, Hi Tanaka and T. Ogawa
    "Chirality dependence of Longtitudinal Unzipping of SWCNT to obtain Graphene Nanoribbon"
    Japanese Journal of Applied Physics     Vol. 56 (2017) 06GG12/1-3.
    Doi: 10.7567/JJAP.56.06GG12

  • R. Negishi(#), Y. Matsui and Y. Kobayashi
    "Improving sensor response using reduced graphene oxide film transistor biosensor by controlling the pyrene adsorption as an anchor molecules"
    Japanese Journal of Applied Physics Vol. 56 (2017) 06GE04/1-4.
    Doi: 10.7567/JJAP.56.06GE04

  • R. Negishi(#), M. Akabori, T. Ito, Y. Watanabe and Y. Kobayashi
    "Band-like transport in highly crystalline graphene films from defective graphene oxides"
    Scientific Reports. Vol. 6 (2016) 28936/1-10.
    Doi: 10.1038/srep28936

  • H. Tanaka, R. Arima, M. Fukumori, D. Tanaka, R. Negishi, Y. Kobayashi, S. Kasai, T. Yamada, T. Ogawa
    "Method for Controlling Electrical Properties of Single-Layer GNR via Adsorbed Planar Molecular Nanoparticles"
    Scientific Reports Vol. 5 (2015) 14399/1-8.
    Doi: 10.1038/srep12341

  • R. Negishi(#) and Y. Kobayashi
    "Extraordinary suppression of carrier scattering in large area graphene oxide films"
    Applied Physics Letters. Vol. 105 (2014) 253502/1-5.
    Doi: 10.1063/1.4905087

  • A. Tosaka, I. Mochizuki, R. Negishi and Y. Shigeta
    "Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)"
    Journal of Applied Physics Vol. 113 (2013) 073511/1-4.
    Doi: 10.1063/1.4792503

    H. Tanaka, L. Hong, M. Fukumori, R. Negishi, Y. Kobayashi, D. Tanaka, T. Ogawa
    "Influence of nanoparticle size on the electrical properties of naphthalenediimide with SWCNT wiring"
    Nanotechnology Vol.23 2(2012) 215701.
    Doi: 10.1088/0957-4484/23/21/215701

  • R. Negishi(#), H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Carrier transport properties of the field effect transistors with graphene channel prepared by CVD"
    Japanese Journal of Applied Physics Vol. 51 (2012) 06FD03/1-4.
    Doi: 10.1143/JJAP.51.06FD03

  • R. Negishi(#), H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor deposition"
    Thin Solid Films Vol. 519 (2011) 6447-6452.
    Doi: 10.1016/j.tsf.2011.04.229

    R. Negishi(#), H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, Y. Kobayashi
    "Thickness control of graphene overlayer via layer-by-layer growth on graphene templates by CVD"
    Japanese Journal of Applied Physics Vol. 50 (2011) 06GE04/1-4.
    Doi: 10.1143/JJAP.50.06GE04

  • T. Nishino, R. Negishi(#), H. Tanaka, T. Ogawa and K. Ishibashi
    "Fabrication of nanogap electrodes by the molecular lithography technique"
    Japanese Journal of Applied Physics Vol. 50 (2011) 035204/1-6.
    Doi: 10.1143/JJAP.50.035204

  • T. Nishino, R. Negishi(#), K. Ishibashi, H. Ozawa, M. Kawao and T. Nagata
    "Fabrication and single electron transport of Au nano-particles　placed between Nb nanogap electrodes"
    Nanotechnology Vol. 21 (2010) 225301/1-6.
    Doi: 10.1088/0957-4484/21/22/225301

  • Y. Shigeta, I. Mochizuki, and R. Negishi
    "Strain induced modification of surface metallic states on √3×√3 Ag structure"
    FBE RAS, IACP (2009) 183.


  • I. Mochizuki, R. Negishi, and Y. Shigeta
    "Strain Induced Modification of Quasi-two Dimensional Electron Gas State on √3×√3 Ag Structure"
    Journal of applied physics Vol. 107 (2010) 084317.
    Doi: 10.1063/1.3373742

  • Y. Shigeta, R. Negishi and M. Suzuki
    "Local electronic states on two-dimensional nanoscale island of Si and Ge fabrication on Si (111) 7x7 substrate"
    International Journal of Nanoscience Vol. 8, No. 6, 595 (2009).
    Doi: 10.1142/S0219581X09006444

  • I. Mochizuki, R. Negishi and Y. Shigeta
    "Modification of electric states of √3×√3 Ag structure by strained Ge/Si(111) substrate"
    Journal of applied physics Vol. 106 (2009) 013709/1-4.
    Doi: 10.1063/1.3159017

  • R. Negishi(#), T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, H. Ozawa and T. Ogawa
    "I-V characteristics of SET from symmetric and asymmetric double-barrier tunneling junctions"
    Applied Physics Letters Vol. 90 (2007) 223112/1-3.
    Doi: 10.1063/1.2745252

  • R. Negishi(#), T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, Hi. Ozawa and T. Ogawa
    "Size-dependent single electron tunneling effect in Au nanoparticles"
    Surface Science Vol. 601 (2007) 3907-3911.
    Doi: 10.1016/j.susc.2007.04.039

  • I. Mochizuki, R. Negishi, and Y. Shigeta
    "Growth of metallic Au silicide islands on the Si(111) -(7×7) substrate"
    Journal of physics Conference Series Vol. 61 (2007) 1056-1060.
    Doi: 10.1088/1742-6596/61/1/209

  • R. Negishi(#), T. Hasegawa, K. Terabe, M. Aono T. Ebihara, H. Tanaka and T. Ogawa
    "Fabrication of nanoscale gaps using a combination of SAM and electron beam lithographic techniques"
    Applied Physics Letters Vol. 88 (2006) 223111-1-3
    Also selected in Virtual Journal of Nanoscale Science & Technology, June 19 Vol. 13, Issue 24 (2006).
    Doi: 10.1063/1.2209208

  • R. Negishi(#), I. Mochizuki and Y. Shigeta
    "Fabrication of uniform Au silicide islands on the Si(111)-(7×7) substrate"
    Surface Science Vol. 600 (2006) 1125-1128.
    Doi: 10.1016/j.susc.2006.01.003

  • M. Suzuki, R. Negishi, and Y. Shigeta
    "Strain and electronic structure of Ge nanoislands on Si(111)-7×7 surface"
    Physical Review B 72 (2005) 235325/1-5.
    Doi: 10.1103/PhysRevB.72.235325

  • C. Liang, K. Terabe, T. Hasegawa, Ryota Negishi, T. Tamura and M. Aono
    "Template-Confined Growth and Nonlinear Electrical Transport"
    Small Vol. 1 (2005) 971-975.
    Doi: 10.1002/smll.200500155

    R. Negishi(#), M. Suzuki and Y. Shigeta
    "Electronic structure of dangling-bond states on the Si nanoisland and the Si(111) 7×7 substrate"
    Journal of Applied Physics Vol. 98 (2005) 063712-1-5
    Also selected in Virtual Journal of Nanoscale Science & Technology, October 10, Vol. 12, Issue 15 (2005).
    Doi: 10.1063/1.2058176

  • R. Negishi(#), M. Suzuki and Y. Shigeta
    "Study of photoelectron spectroscopy from extremely uniform Si nano-islands on Si(111) 7×7 substrate"
    Journal of Applied Physics Vol. 96 (2004) 5013-5016.
    Doi: 10.1063/1.1801156

  • R. Negishi(#) and Y. Shigeta
    "Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7×7) surface"
    Jornal of Applied Physics Vol. 93 (2003) 4824-4830.
    Doi: 10.1063/1.1561586

  • R. Negishi(#) and Y. Shigeta
    "Local structure and electronic state of a nanoscale Si island on Si(111)-7×7 substrate",
    Surface Science Vol. 507-510 (2002) 582-587.
    Doi: 10.1016/S0039-6028(02)01404-8

  • R. Negishi(#) and Y. Shigeta
    "Nucleation of polycrystalline layer induced by formation of 30 ° partial dislocation during Si/Si(111) growth"
    Surface Science Vol. 505 (2002) 225-233.
    Doi: 10.1016/S0039-6028(02)01162-7

  • R. Negishi(#) and Y. Shigeta
    "Surface roughening induced by a characteristic surface structure of a Si film grown on Si(111)"
    Surface Science Vol. 481 (2001) 67-77.
    Doi: 10.1016/S0039-6028(01)00988-8

Invited Papers・Books


  • Ryota Negishi, Yoshihiro Kobayashi
    “酸化グラフェンからの高結晶性グラフェン薄膜の合成とバイオセンサー応用”
    MATERIAL STAGE, Vol.17, No. 1, pp. 1-6 (2017)

  • Ryota Negishi, Yoshihiro Kobayashi
    “酸化グラフェンからのバンド伝導性を示す高結晶性グラフェン薄膜の形成”
    ナノ学会会報, Vol.15, No. 2, pp. 39-45 (2017)

  • T. Nishino, R. Negishi, K. Ishibashi
    “自己組織化分子リソグラフィーによるナノギャップ電極作製法の開発と応用”
    Journal Vacuum Society Japan, Vol.55, No. 7, pp.333-340 (2012)

  • Ryota Negishi、Hirofumi Tanaka
    “ハイブリッド型微細加工技術を用いた金ナノ粒子の単電子トンネルの観察”
    Journal Vacuum Society Japan, Vol. 51, No. 7, pp. 428-432 (2008)

  • Yukichi Shigeta、Ryota Negishi、Masahiko Suzeki
    “シリコン及びゲルマニュームナノアイランドの微細構造と局所電子状態”
    Journal Vacuum Society Japan, Vol. 51, No. 5, pp. 291-297 (2008).

  • Y. Shigeta, R. Negishi and M. Suzuki
    Surface Science Research, edited by Charles P. Norris (Nova Science Publishers, 2005), Chap. 4, pp.75-91.


Patents


  • 根岸 良太、小林 慶裕、松崎 通弘
    “グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子およびセンサ”
    特願2014-172628（2014年8月27日）

  • 小林 慶裕、根岸 良太、加瀬 寛人、有福 達治、清柳 典子、森野 富夫
    ”電界効果トランジスタおよびそれを用いたセンサ”
    特願2014-162737 （2014年8月8日）

  • 根岸 良太、小林 慶裕、高坂 成時、大野 恭秀、前橋 兼三、松本 和彦
    “グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子、センサー、アレイ素子およびセンシング方法”
    特願2013-105560（2013年5月17日）

  • KOBAYASHI Yoshihiro, NEGISHI Ryota, KORIYAMA Koriyama, AGATA Shogo, FUJIMOTO Kazuki, ARIFUKU Michiharu, SHIMMOTO Masahiro, IMAIZUMI Masahiro, KIYOYANAGI Noriko
    “High Purity Carbon Nanotube, Process For Preparing The Same And Transparent Conductive Using The Same”
    特願　米国特許　13/764,981(2013年2月12日)

  • 小林 慶裕、根岸 良太、郡山 翔二、阿形 省吾、藤本 一輝、有福 達治、新本 昭樹、今泉 雅裕、清柳 典子
    ”高純度カーボンナノチューブ、その製造方法及びそれを用いた透明導電膜”
    特願2012-27970 （2012年2月12日）

Prizes


  • R. Negishi, M. Akabori, T. Ito, Y. Watanabe and K. Yshihiro.
    2016年　第1回 ｢薄膜・表面物理分科会｣ "論文賞"

  • R. Negishi
    2009年　理化学研究所 野良良治　"理事長賞"

  • T. Nishino, R. Negishi, H. Ozawa and K. Ishibashi.
    2009年 22nd International Microprocesses and Nanotechnology Conference, "Most Impressive Poster

  • K. Terabe, T. Hasegawa, T. Tamura, M. Kundu, R. Negishi, Changhao Liang, T. Sakamoto and M. Aono.
    2005年 Intelligent Materials and System Forum "TAKAGI AWARD"
　　　
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